ME2301-G Datasheet | Matsuki

P-Channel Enhancement Mode Mosfet GENERAL DESCRIPTION The ME2301 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management and other battery powered circuits where low in-line power loss are needed in a very small outline surface mount package. ME2301/ME2301-G Features - RDS(ON) ≦110mΩ@VGS=-4.5V - RDS(ON) ≦150mΩ@VGS=-2.5V - Super high density cell design for extremely low RDS(ON) APPLICATIONS - Power...