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ME2301-G - P-Channel Enhancement Mode Mosfet

This page provides the datasheet information for the ME2301-G, a member of the ME2301 P-Channel Enhancement Mode Mosfet family.

Product Overview

Matsuki

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ME2301-G P-Channel Enhancement Mode Mosfet by Matsuki - Datasheet Preview — Datasheet preview – ME2301-G

Datasheet Details

Part number	ME2301-G
Manufacturer	Matsuki
File Size	1.04 MB
Description	P-Channel Enhancement Mode Mosfet
Datasheet	ME2301-G Datasheet
Additional preview pages of the ME2301-G datasheet.

ME2301-G Product details

Description

The ME2301 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Features

RDS(ON) ≦110mΩ@VGS=-4.5V.
RDS(ON) ≦150mΩ@VGS=-2.5V.
Super high density cell design for extremely low RDS(ON).

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Other Datasheets by Matsuki

ME2301 - P-Channel Enhancement Mode Mosfet
ME2301A - P-Channel 20V (D-S) MOSFET
ME2301A-G - P-Channel 20V (D-S) MOSFET
ME2301DC - P-Channel 20V (D-S) MOSFET
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Published: Mar 20, 2018 |