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ME2301-G Datasheet P-channel Enhancement Mode MOSFET

Manufacturer: Matsuki

Overview: P-Channel Enhancement Mode Mosfet GENERAL.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

The ME2301 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management and other battery powered circuits where low in-line power loss are needed in a very small outline surface mount package.

Key Features

  • RDS(ON) ≦110mΩ@VGS=-4.5V.
  • RDS(ON) ≦150mΩ@VGS=-2.5V.
  • Super high density cell design for extremely low RDS(ON).

ME2301-G Distributor