ME2301-G Description
The ME2301 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management and other battery powered circuits where low in-line power loss are...
ME2301-G Key Features
- RDS(ON) ≦110mΩ@VGS=-4.5V
- RDS(ON) ≦150mΩ@VGS=-2.5V
- Super high density cell design for extremely low RDS(ON)
ME2301-G Applications
- Power Management in Note book