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ME2306-G - N-Channel Enhancement Mode Mosfet

This page provides the datasheet information for the ME2306-G, a member of the ME2306 N-Channel Enhancement Mode Mosfet family.

Product Overview

Matsuki

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ME2306-G N-Channel Enhancement Mode Mosfet by Matsuki - Datasheet Preview — Datasheet preview – ME2306-G

Datasheet Details

Part number	ME2306-G
Manufacturer	Matsuki
File Size	1.02 MB
Description	N-Channel Enhancement Mode Mosfet
Datasheet	ME2306-G Datasheet
Additional preview pages of the ME2306-G datasheet.

ME2306-G Product details

Description

The ME2306 is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Features

RDS(ON)≦37mΩ@VGS=10V.
RDS(ON)≦49mΩ@VGS=4.5V.
Super high density cell design for extremely low RDS(ON).
Exceptional on-resistance and maximum DC current capability PIN.

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Other Datasheets by Matsuki

ME2306 - N-Channel Enhancement Mode Mosfet
ME2306A - N-Channel 30V (D-S) MOSFET
ME2306A-G - N-Channel 30V (D-S) MOSFET
ME2306AS - N-Channel 30V (D-S) MOSFET
ME2306AS-G - N-Channel 30V (D-S) MOSFET
ME2306D - N-Channel 30V (D-S) MOSFET
ME2306D-G - N-Channel 30V (D-S) MOSFET
ME2306DS - N-Channel 30V (D-S) MOSFET

Published: Mar 20, 2018 |