ME2306-G Description
The ME2306 is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone, notebook puter power management and other battery powered circuits, and low in-line power loss that are needed in a...
ME2306-G Key Features
- RDS(ON)≦37mΩ@VGS=10V
- RDS(ON)≦49mΩ@VGS=4.5V
- Super high density cell design for extremely low RDS(ON)
- Exceptional on-resistance and maximum DC current