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ME2306 - N-Channel Enhancement Mode Mosfet

General Description

The ME2306 is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Key Features

  • RDS(ON)≦37mΩ@VGS=10V.
  • RDS(ON)≦49mΩ@VGS=4.5V.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability PIN.

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Datasheet Details

Part number ME2306
Manufacturer Matsuki
File Size 1.02 MB
Description N-Channel Enhancement Mode Mosfet
Datasheet download datasheet ME2306 Datasheet

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N-Channel Enhancement Mode MOSFET GENERAL DESCRIPTION The ME2306 is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone, notebook computer power management and other battery powered circuits, and low in-line power loss that are needed in a very small outline surface mount package. ME2306/ME2306-G FEATURES ● RDS(ON)≦37mΩ@VGS=10V ● RDS(ON)≦49mΩ@VGS=4.