ME2306A-G
ME2306A-G is N-Channel 30V (D-S) MOSFET manufactured by Matsuki.
- Part of the ME2306A comparator family.
- Part of the ME2306A comparator family.
DESCRIPTION
The ME2306A is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone, notebook puter power management and other battery powered circuits, and low in-line power loss that are needed in a very small outline surface mount package.
PIN CONFIGURATION
(SOT-23) Top View
FEATURES
- RDS(ON)≦32mΩ@VGS=10V
- RDS(ON)≦38mΩ@VGS=4.5V
- RDS(ON)≦50mΩ@VGS=2.5V
- Super high density cell design for extremely low RDS(ON)
- Exceptional on-resistance and maximum DC current capability
APPLICATIONS
- Power Management in Note book
- Portable Equipment
- Battery Powered System
- DC/DC Converter
- Load Switch
- DSC
- LCD Display inverter e Ordering Information: ME2306A...
