ME2306AS-G Description
The ME2306AS is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phone, notebook puter power management and other battery powered circuits, and low in-line power loss that are needed in a...
ME2306AS-G Key Features
- RDS(ON)≦32mΩ@VGS=10V
- RDS(ON)≦38mΩ@VGS=4.5V
- RDS(ON)≦50mΩ@VGS=2.5V
- Super high density cell design for extremely low RDS(ON)
- Exceptional on-resistance and maximum DC current
ME2306AS-G Applications
- Power Management in Note book