ME2306D-G Datasheet | Matsuki

DESCRIPTION The ME2306D is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management and other battery powered circuits where high-side switching , and low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION (SOT-23) Top View FEATURES - RDS(ON)≦31mΩ@VGS=10V - RDS(ON)≦52mΩ@VGS=4.5V - ESD Protected - Super high density cell design for extremely low RDS(ON) - Exceptional on-resistance and maximum DC current capability APPLICATIONS - Power Management in Note book - Portable Equipment - Load Switch e Ordering Information: ME2306D(Pb-free) ME2306D-G (Green product-Halogen...