ME2306D
ME2306D is N-Channel 30V (D-S) MOSFET manufactured by Matsuki.
DESCRIPTION
The ME2306D is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management and other battery powered circuits where high-side switching , and low in-line power loss are needed in a very small outline surface mount package.
PIN CONFIGURATION
(SOT-23) Top View
FEATURES
- RDS(ON)≦31mΩ@VGS=10V
- RDS(ON)≦52mΩ@VGS=4.5V
- ESD Protected
- Super high density cell design for extremely low RDS(ON)
- Exceptional on-resistance and maximum DC current capability
APPLICATIONS
- Power Management in Note book
- Portable Equipment
- Load Switch e Ordering Information: ME2306D(Pb-free)
ME2306D-G (Green product-Halogen...
