ME2306DS-G Description
The ME2306DS is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management and other battery powered circuits where high-side switching ,...
ME2306DS-G Key Features
- RDS(ON)≦31mΩ@VGS=10V
- RDS(ON)≦52mΩ@VGS=4.5V
- ESD Protected
- Super high density cell design for extremely low RDS(ON)
- Exceptional on-resistance and maximum DC current
ME2306DS-G Applications
- Power Management in Note book