Datasheet Details
| Part number | ME2306S-G |
|---|---|
| Manufacturer | Matsuki |
| File Size | 1.14 MB |
| Description | N-Channel 30V (D-S) MOSFET |
| Datasheet | ME2306S-G ME2306S Datasheet (PDF) |
|
|
Overview: N-Channel 30V(D-S) MOSFET GENERAL.
This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | ME2306S-G |
|---|---|
| Manufacturer | Matsuki |
| File Size | 1.14 MB |
| Description | N-Channel 30V (D-S) MOSFET |
| Datasheet | ME2306S-G ME2306S Datasheet (PDF) |
|
|
|
The ME2306S is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone, notebook computer power management and other battery powered circuits, and low in-line power loss that are needed in a very small outline surface mount package.
Compare ME2306S-G distributor prices and check real-time stock availability from major suppliers. Prices and inventory may vary by region and order quantity.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
ME2306 | N-Channel MOSFET | VBsemi |
| Part Number | Description |
|---|---|
| ME2306S | N-Channel 30V (D-S) MOSFET |
| ME2306 | N-Channel Enhancement Mode Mosfet |
| ME2306-G | N-Channel Enhancement Mode Mosfet |
| ME2306A | N-Channel 30V (D-S) MOSFET |
| ME2306A-G | N-Channel 30V (D-S) MOSFET |
| ME2306AS | N-Channel 30V (D-S) MOSFET |
| ME2306AS-G | N-Channel 30V (D-S) MOSFET |
| ME2306D | N-Channel 30V (D-S) MOSFET |
| ME2306D-G | N-Channel 30V (D-S) MOSFET |
| ME2306DS | N-Channel 30V (D-S) MOSFET |