The ME2306S is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
| Part number | ME2306S |
|---|---|
| Manufacturer | Matsuki |
| File Size | 1.14 MB |
| Description | N-Channel 30V (D-S) MOSFET |
| Datasheet |
 ME2306S Datasheet
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| Part Number | Description | Manufacturer |
|---|---|---|
| ME2306 | N-Channel MOSFET | VBsemi |
| ME2301D | P-Channel MOSFET | VBsemi |
| ME2303 | P-Channel MOSFET | VBsemi |
| ME2305 | P-Channel MOSFET | HAOHAI |
| ME2323D | P-Channel MOSFET | VBsemi |
| Part Number | Description |
|---|---|
| ME2306S-G | N-Channel 30V (D-S) MOSFET |
| ME2306 | N-Channel Enhancement Mode Mosfet |
| ME2306-G | N-Channel Enhancement Mode Mosfet |
| ME2306A | N-Channel 30V (D-S) MOSFET |
| ME2306A-G | N-Channel 30V (D-S) MOSFET |
The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.
