ME2306S
ME2306S is N-Channel 30V (D-S) MOSFET manufactured by Matsuki.
DESCRIPTION
The ME2306S is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone, notebook puter power management and other battery powered circuits, and low in-line power loss that are needed in a very small outline surface mount package.
ME2306S/ME2306S-G
FEATURES
FEATURES
- RDS(ON)≦37mΩ@ VGS =10V
- RDS(ON)≦49mΩ@VGS=4.5V
- Super high density cell design for extremely low RDS(ON)
- Exceptional on-resistance and maximum DC current capability
APPLICATIONS
- Power Management in Note book
- DC/DC Converter
- Load Switch
- LCD Display inverter
PIN CONFIGURATION
(SOT-23) Top View
- The Ordering Information: ME2306S (Pb-free) ME2306S-G (Green product-Halogen free)
Absolute Maximum Ratings...
