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ME2312-G Datasheet N-channel 20v (d-s) MOSFET

Manufacturer: Matsuki

Overview: N-Channel 20-V (D-S) MOSFET GENERAL.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

The ME2312-G is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management and other battery powered circuits where high-side switching and low in-line power loss are needed in a very small outline surface mount package.

Key Features

  • RDS(ON)≦33mΩ@VGS=4.5V.
  • RDS(ON)≦40mΩ@VGS=2.5V.
  • RDS(ON)≦51mΩ@VGS=1.8V.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.

More Datasheets from Matsuki

Part Number Description
ME2312 N-Channel 20V (D-S) MOSFET
ME2313 P-Channel 20V (D-S) MOSFET
ME2313-G P-Channel 20V (D-S) MOSFET
ME2317D-G P-Channel 30V (D-S) MOSFET
ME2318-G N-Channel 20V (D-S) MOSFET
ME2318S N-Channel 40V (D-S) MOSFET
ME2318S-G N-Channel 40V (D-S) MOSFET
ME2301 P-Channel Enhancement Mode Mosfet
ME2301-G P-Channel Enhancement Mode Mosfet
ME2301A P-Channel 20V (D-S) MOSFET

ME2312-G Distributor