ME2313-G Overview
The ME2313 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management and other battery powered circuits where high-side switching and low...
ME2313-G Key Features
- RDS(ON)≦48mΩ@VGS=-10V
- RDS(ON)≦52mΩ@VGS=-4.5V
- RDS(ON)≦65mΩ@VGS=-2.5V
- RDS(ON)≦85mΩ@VGS=-1.8V
- Super high density cell design for extremely low RDS(ON)
- Exceptional on-resistance and maximum DC current
ME2313-G Applications
- Power Management in Note book