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ME2318S Datasheet N-channel 40v (d-s) MOSFET

Manufacturer: Matsuki

Overview: N-Channel 40V (D-S) MOSFET ME2318S /ME2318S-G GENERAL.

Datasheet Details

Part number ME2318S
Manufacturer Matsuki
File Size 960.33 KB
Description N-Channel 40V (D-S) MOSFET
Datasheet ME2318S-Matsuki.pdf

General Description

The ME2318S-G is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management and other battery powered circuits where high-side switching and low in-line power loss are needed in a very small outline surface mount package.

Key Features

  • RDS(ON) ≦40mΩ@VGS=10V.
  • RDS(ON) ≦65mΩ@VGS=4.5V.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.

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ME2318S Distributor