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ME2345A - P-Channel 30V (D-S) MOSFET

General Description

The ME2345A is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Key Features

  • RDS(ON) ≦68mΩ@VGS=-10V.
  • RDS(ON) ≦80mΩ@VGS=-4.5V.
  • RDS(ON) ≦100mΩ@VGS=-2.5V.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.

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Datasheet Details

Part number ME2345A
Manufacturer Matsuki
File Size 781.39 KB
Description P-Channel 30V (D-S) MOSFET
Datasheet download datasheet ME2345A Datasheet

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P-Channel 30V (D-S) MOSFET ME2345A/ME2345A-G GENERAL DESCRIPTION The ME2345A is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where switching and low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION (SOT-23) Top View FEATURES ● RDS(ON) ≦68mΩ@VGS=-10V ● RDS(ON) ≦80mΩ@VGS=-4.5V ● RDS(ON) ≦100mΩ@VGS=-2.