ME2345A Description
The ME2345A is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management and other battery powered circuits where switching and low in-line...
ME2345A Key Features
- RDS(ON) ≦68mΩ@VGS=-10V
- RDS(ON) ≦80mΩ@VGS=-4.5V
- RDS(ON) ≦100mΩ@VGS=-2.5V
- Super high density cell design for extremely low RDS(ON)
- Exceptional on-resistance and maximum DC current
ME2345A Applications
- Power Management in Note book