ME2508-G Description
The ME2508 is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management and other battery powered circuits where high-side switching and low in-line...
ME2508-G Key Features
- RDS(ON)≦74mΩ@VGS=10V
- RDS(ON)≦92mΩ@VGS=4.5V
- Super high density cell design for extremely low RDS(ON)
- Exceptional on-resistance and maximum DC current
ME2508-G Applications
- Power Management in Note book