ME25N15F-G
DESCRIPTION
The ME25N15F is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on state resistance.
PIN CONFIGURATION
ME25N15F/ME25N15F-G
FEATURES
- RDS(ON)≦75mΩ@VGS=10V
- Super high density cell design for extremely low RDS(ON)
- Exceptional on-resistance and maximum DC current capability
APPLICATIONS
- Power Management in Note book
- DC/DC Converter
- Load Switch
- LCD Display inverter
(TO-220F) Top View
- The Ordering Information: ME25N15F (Pb-free)
ME25N15F-G (Green product-Halogen free)
Absolute Maximum Ratings (TC=25℃ Unless Otherwise Noted)
Parameter
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current
TC=25℃ TC=70℃
Symbol
VDS VGS
Pulsed Drain Current Maximum Power Dissipation
TC=25℃ TC=70℃
IDM PD
Junction and Storage Temperature Range
Thermal Resistance-Junction...
