ME2N7002DA Datasheet | Matsuki

ME2N7002DA/ME2N7002DA-G - Channel 60V (D-S) MOSFET, ESD Protection GENERAL DESCRIPTION The ME2N7002DA is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management and other battery powered circuits , and low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION (SOT-23) Top View Features - RDS(ON) ≦4Ω@VGS=10V - RDS(ON) ≦4Ω@VGS=4.5V - Super high density cell design for...