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ME2N7002DA - N-Channel MOSFET

General Description

The ME2N7002DA is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Key Features

  • RDS(ON) ≦4Ω@VGS=10V.
  • RDS(ON) ≦4Ω@VGS=4.5V.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.
  • Capable doing Cu wire bonding.

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Datasheet Details

Part number ME2N7002DA
Manufacturer Matsuki
File Size 873.84 KB
Description N-Channel MOSFET
Datasheet download datasheet ME2N7002DA Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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ME2N7002DA/ME2N7002DA-G N - Channel 60V (D-S) MOSFET, ESD Protection GENERAL DESCRIPTION The ME2N7002DA is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits , and low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION (SOT-23) Top View FEATURES ● RDS(ON) ≦4Ω@VGS=10V ● RDS(ON) ≦4Ω@VGS=4.