Datasheet Details
| Part number | ME2N7002W |
|---|---|
| Manufacturer | Matsuki |
| File Size | 854.65 KB |
| Description | N-Channel MOSFET |
| Datasheet | ME2N7002W-Matsuki.pdf |
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Overview: N-Channel MOSFET GENERAL.
| Part number | ME2N7002W |
|---|---|
| Manufacturer | Matsuki |
| File Size | 854.65 KB |
| Description | N-Channel MOSFET |
| Datasheet | ME2N7002W-Matsuki.pdf |
|
|
|
The ME2N7002W is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management and other battery powered circuits where high-side switching , and low in-line power loss are needed in a very small outline surface mount package.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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ME2N7002E | N-Channel 60V MOSFET | VBsemi |
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| ME2N7002D2-G | N-Channel MOSFET |
| ME2N7002D2KW-G | Dual N-Channel MOSFET |
| ME2N7002DA | N-Channel MOSFET |
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