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ME2N7002W - N-Channel MOSFET

Description

The ME2N7002W is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Features

  • Simple Drive Requirement.
  • Small Package Outline.
  • ROHS Compliant Mechanical data.
  • High density cell design for low RDS(ON).
  • Voltage controlled small signal switching.
  • Rugged and reliable.
  • High saturation current capability.
  • High-speed switching.
  • Not thermal runaway.
  • The soldering temperature and time shall not exceed 260℃ for more than 10 seconds.

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Datasheet Details

Part number ME2N7002W
Manufacturer Matsuki
File Size 854.65 KB
Description N-Channel MOSFET
Datasheet download datasheet ME2N7002W Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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N-Channel MOSFET GENERAL DESCRIPTION The ME2N7002W is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching , and low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION (SOT-323) Top View ME2N7002W FEATURES ● Simple Drive Requirement ● Small Package Outline ● ROHS Compliant Mechanical data ● High density cell design for low RDS(ON) ● Voltage controlled small signal switching. ● Rugged and reliable.
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