ME4435-G Datasheet | Matsuki

.Data Sheet.co.kr ME4435(-G) P-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION The ME4435 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management and other battery powered circuits where high-side switching and low in-line power loss are needed in a very small outline surface mount package. Features - RDS(ON)≦20mΩ@VGS=-10V - RDS(ON)≦35mΩ@VGS=-4.5V - Super high density cell design for extremely low RDS(ON) - Exceptional on-resistance and maximum DC current capability APPLICATIONS - Power Management in Note book - Portable Equipment - Battery Powered System - DC/DC Converter - Load Switch - DSC - LCD Display inverter CONFIGURATION (SOP-8) Top View e Ordering Information: ME4435 (Pb-free) ME4435-G (Green product-Halogen free...