ME4435 Description
The ME4435 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management and other battery powered circuits where high-side switching and...
ME4435 Key Features
- 30V/-9.1A,RDS(ON)=20mΩ@VGS=-10V
- 30V/-6.9A,RDS(ON)=35mΩ@VGS=-4.5V
- Super high density cell design for extremely low RDS(ON)
- Exceptional on-resistance and maximum DC current capability
ME4435 Applications
- Power Management in Note book