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ME50N75T - N-Channel MOSFET

General Description

The ME50N75T is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Key Features

  • RDS(ON)≦26mΩ@VGS=10V.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.

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Datasheet Details

Part number ME50N75T
Manufacturer Matsuki
File Size 1.16 MB
Description N-Channel MOSFET
Datasheet download datasheet ME50N75T Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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N-Channel 75-V (D-S) MOSFET ME50N75T/ME50N75T-G GENERAL DESCRIPTION The ME50N75T is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.