ME55N06A-G Datasheet PDF - Matsuki N-Channel 75-V (D-S) MOSFET Specs

ME55N06A-G - N-Channel 75-V (D-S) MOSFET

This page provides the datasheet information for the ME55N06A-G, a member of the ME55N06A N-Channel 75-V (D-S) MOSFET family.

Datasheet Summary

Description

The ME55N06A is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on state resistance.

Features

RDS(ON)≦9.5mΩ@VGS=10V.
Super high density cell design for extremely low RDS(ON).
Exceptional on-resistance and maximum DC current capability.

Datasheet Details

Part number	ME55N06A-G
Manufacturer	Matsuki
File Size	0.98 MB
Description	N-Channel 75-V (D-S) MOSFET
Datasheet	ME55N06A-G Datasheet
Additional preview pages of the ME55N06A-G datasheet.

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Full PDF Text Transcription

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N-Channel 75-V (D-S) MOSFET ME55N06A/ ME55N06A-G GENERAL DESCRIPTION The ME55N06A is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on state resistance. These devices are particularly suited for low voltage application such as cellular phone, notebook computer power management and other battery powered circuits, and low in-line power loss that are needed in a very small outline surface mount package. FEATURES ● RDS(ON)≦9.

Published: Mar 22, 2018 |