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ME60P06T-G - P-Channel MOSFET

This page provides the datasheet information for the ME60P06T-G, a member of the ME60P06T P-Channel MOSFET family.

Datasheet Summary

Description

The ME60P06T is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Features

  • RDS(ON)≦16.5mΩ@VGS=-10V.
  • RDS(ON)≦20.5mΩ@VGS=-4.5V.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.

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Datasheet preview – ME60P06T-G

Datasheet Details

Part number ME60P06T-G
Manufacturer Matsuki
File Size 819.85 KB
Description P-Channel MOSFET
Datasheet download datasheet ME60P06T-G Datasheet
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Full PDF Text Transcription

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P- Channel 60-V (D-S) MOSFET GENERAL DESCRIPTION The ME60P06T is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. PIN CONFIGURATION (TO-220) Top View ME60P06T/ME60P06T-G FEATURES ● RDS(ON)≦16.5mΩ@VGS=-10V ● RDS(ON)≦20.5mΩ@VGS=-4.
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