ME60P06T-G Overview
The ME60P06T is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. (TO-220) Top View ME60P06T/ME60P06T-G.
ME60P06T-G Key Features
- RDS(ON)≦16.5mΩ@VGS=-10V
- RDS(ON)≦20.5mΩ@VGS=-4.5V
- Super high density cell design for extremely low RDS(ON)
- Exceptional on-resistance and maximum DC current
ME60P06T-G Applications
- Power Management in Note book