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ME6970D - Dual N-Channel MOSFET

Description

The ME6970D Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Features

  • RDS(ON)≦22mΩ@VGS=4.5V.
  • RDS(ON)≦23mΩ@VGS=4.0V.
  • RDS(ON)≦26mΩ@VGS=3.0V.
  • RDS(ON)≦29mΩ@VGS=2.5V.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.

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Datasheet Details

Part number ME6970D
Manufacturer Matsuki
File Size 1.02 MB
Description Dual N-Channel MOSFET
Datasheet download datasheet ME6970D Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Dual N-Channel 20-V (D-S) MOSFET ME6970D/ME6970D-G GENERAL DESCRIPTION The ME6970D Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching, and low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION (TSSOP-8) Top View FEATURES ● RDS(ON)≦22mΩ@VGS=4.5V ● RDS(ON)≦23mΩ@VGS=4.0V ● RDS(ON)≦26mΩ@VGS=3.0V ● RDS(ON)≦29mΩ@VGS=2.
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