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ME6980ED-G - Dual N-Channel MOSFET

Download the ME6980ED-G datasheet PDF. This datasheet also covers the ME6980ED variant, as both devices belong to the same dual n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

The ME6980ED is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Features

  • RDS(ON)≦14.5mΩ@VGS=4.5V.
  • RDS(ON)≦15mΩ@VGS=4.0V.
  • RDS(ON)≦17mΩ@VGS=3.1V.
  • RDS(ON)≦20mΩ@VGS=2.5V.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (ME6980ED-Matsuki.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number ME6980ED-G
Manufacturer Matsuki
File Size 1.14 MB
Description Dual N-Channel MOSFET
Datasheet download datasheet ME6980ED-G Datasheet

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Other Datasheets by Matsuki

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Full PDF Text Transcription

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ME6980ED/ME6980ED-G Dual N-Channel 20V(D-S) Enhancement Mode Mosfet , ESD Protection GENERAL DESCRIPTION The ME6980ED is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching , and low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION (TSSOP-8) Top View FEATURES ● RDS(ON)≦14.5mΩ@VGS=4.5V ● RDS(ON)≦15mΩ@VGS=4.0V ● RDS(ON)≦17mΩ@VGS=3.1V ● RDS(ON)≦20mΩ@VGS=2.
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