ME7170-G
Description
The ME7170-G is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.
Key Features
- RDS(ON)≦2.6mΩ@VGS=10V
- RDS(ON)≦3.9mΩ@VGS=4.5V
- Super high density cell design for extremely low RDS(ON)
- Exceptional on-resistance and maximum DC current capability
