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ME75N75T - N-Channel MOSFET

Description

The ME75N75T is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Features

  • RDS(ON)≦10mΩ@VGS=10V.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.

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Datasheet preview – ME75N75T

Datasheet Details

Part number ME75N75T
Manufacturer Matsuki
File Size 845.75 KB
Description N-Channel MOSFET
Datasheet download datasheet ME75N75T Datasheet
Additional preview pages of the ME75N75T datasheet.

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Full PDF Text Transcription

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ME75N75T / ME75N75T-G N- Channel 75-V (D-S) MOSFET GENERAL DESCRIPTION The ME75N75T is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.
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