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ME7609D-G - P-Channel MOSFET

This page provides the datasheet information for the ME7609D-G, a member of the ME7609D P-Channel MOSFET family.

Description

The ME7609D P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Features

  • RDS(ON) ≦19.5mΩ@VGS=-10V.
  • RDS(ON) ≦40mΩ@VGS=-4.5V.

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Datasheet preview – ME7609D-G

Datasheet Details

Part number ME7609D-G
Manufacturer Matsuki
File Size 1.06 MB
Description P-Channel MOSFET
Datasheet download datasheet ME7609D-G Datasheet
Additional preview pages of the ME7609D-G datasheet.

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Full PDF Text Transcription

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ME7609D/ME7609D-G P-Channel 30-V (D-S) MOSFET, ESD Producted GENERAL DESCRIPTION The ME7609D P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching , and low in-line power loss are needed in a very small outline surface mount package. FEATURES ● RDS(ON) ≦19.5mΩ@VGS=-10V ● RDS(ON) ≦40mΩ@VGS=-4.
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