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ME7609D-G - P-Channel MOSFET

Download the ME7609D-G datasheet PDF. This datasheet also covers the ME7609D variant, as both devices belong to the same p-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

The ME7609D P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Key Features

  • RDS(ON) ≦19.5mΩ@VGS=-10V.
  • RDS(ON) ≦40mΩ@VGS=-4.5V.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (ME7609D-Matsuki.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number ME7609D-G
Manufacturer Matsuki
File Size 1.06 MB
Description P-Channel MOSFET
Datasheet download datasheet ME7609D-G Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
ME7609D/ME7609D-G P-Channel 30-V (D-S) MOSFET, ESD Producted GENERAL DESCRIPTION The ME7609D P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching , and low in-line power loss are needed in a very small outline surface mount package. FEATURES ● RDS(ON) ≦19.5mΩ@VGS=-10V ● RDS(ON) ≦40mΩ@VGS=-4.