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ME7802S-G - N-Channel MOSFET

Description

The ME7802S-G is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Features

  • RDS(ON) mΩ@VGS=10V RDS(ON) mΩ@VGS=4.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability.

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Datasheet preview – ME7802S-G

Datasheet Details

Part number ME7802S-G
Manufacturer Matsuki
File Size 714.14 KB
Description N-Channel MOSFET
Datasheet download datasheet ME7802S-G Datasheet
Additional preview pages of the ME7802S-G datasheet.

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Full PDF Text Transcription

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N-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION The ME7802S-G is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where Low-side switching , and low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION (DFN 3.3x3.3) Top View ME7802S-G FEATURES RDS(ON) mΩ@VGS=10V RDS(ON) mΩ@VGS=4.
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