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ME9435 - 30V P-Channel Enhancement Mode MOSFET

Description

The ME9435 is the P-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Features

  • @VGS=-10V 2. -30V/-4.2A, RDS(ON)=100m @VGS=-4.5V 1. -30V/-5.3A, RDS(ON)=60m PIN.

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Datasheet preview – ME9435

Datasheet Details

Part number ME9435
Manufacturer Matsuki
File Size 725.31 KB
Description 30V P-Channel Enhancement Mode MOSFET
Datasheet download datasheet ME9435 Datasheet
Additional preview pages of the ME9435 datasheet.

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Full PDF Text Transcription

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ME9435 30V P-Channel Enhancement Mode MOSFET GENERAL DESCRIPTION The ME9435 is the P-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone, notebook computer power management and other battery powered circuits, and in-lin power loss that are needed in a very small outline surface mount package. FEATURES @VGS=-10V 2. -30V/-4.2A, RDS(ON)=100m @VGS=-4.5V 1. -30V/-5.
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