ME9435
ME9435 is 30V P-Channel Enhancement Mode MOSFET manufactured by Matsuki.
DESCRIPTION
The ME9435 is the P-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone, notebook puter power management and other battery powered circuits, and in-lin power loss that are needed in a very small outline surface mount package.
FEATURES
@VGS=-10V 2. -30V/-4.2A, RDS(ON)=100m @VGS=-4.5V
1. -30V/-5.3A, RDS(ON)=60m
CONFIGURATION
(SOP-8) Top View
Absolute Maximum Ratings (TA=25
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current 1) Maximum Power Dissipation Operating Junction Temperature
.. Junction-to-Case Thermal Resistance
Unless Otherwise Noted)
Symbol
VDSS VGSS
10 secs
Steady State
-30 ±20 -5.3 -20 2.5
Unit
V V A A W
TA=25
ID IDM
TA=25
PD TJ RθJC RθJA
-55 to 150 30 50 /W /W
Junction-to-Ambient Thermal Resistance (PCB mounted) 2)
Notes: 1. Maximum DC current limited by the package; 2. 1-in2 2oz PCB board
Apr, 2007-Ver4.0
30V P-Channel Enhancement Mode MOSFET
Electrical Characteristics (TA =25
Symbol
STATIC BVDSS VGS(th) IGSS IDSS RDS(ON) Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance VGS=0V, ID=-250 A -30 -1.0 -2.2 -3.0 ±100 -1 50 90 4 7 65 110 S m V V n A A
Unless Otherwise Specified)
Limit Min Typ Max Unit
Parameter
VDS=VGS, ID=-250 A VDS=0V, VGS=±20V VDS=-24 VGS=0V VGS=-10V, ID= -5.3A VGS=-4.5V, ID= -4.2A
DYNAMIC Rg Ciss Coss Crss Qg Qgs Qgd
VDS=-15, ID=-5.3A
Gate resistance Input capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall...
