MESS138W - N-Channel MOSFET

Description

The MESS138W is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Features

RDS(ON)≦3Ω@VGS=10V.
RDS(ON)≦3.5Ω@VGS=5V.
RDS(ON)≦7Ω@VGS=2.75V.
Super high density cell design for extremely low RDS(ON).
Exceptional on-resistance and maximum DC current capability.

Matsuki

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Datasheet Details

Part number	MESS138W
Manufacturer	Matsuki
File Size	738.98 KB
Description	N-Channel MOSFET
Datasheet	MESS138W Datasheet
Additional preview pages of the MESS138W datasheet.

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Full PDF Text Transcription

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N - Channel 50-V (D-S) MOSFET MESS138W/MESS138W-G GENERAL DESCRIPTION The MESS138W is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. FEATURES ● RDS(ON)≦3Ω@VGS=10V ● RDS(ON)≦3.5Ω@VGS=5V ● RDS(ON)≦7Ω@VGS=2.

Published: Mar 20, 2018 |