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2SC4986 - NPN Transistor

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Features

  • 10.8±0.2 q High collector to base voltage VCBO q High collector to emitter VCEO q Allowing automatic insertion with radial taping 2.5±0.1 90° 0.65±0.1 0.85±0.1 1.0±0.1 0.8C 0.8C 0.7±0.1 0.7±0.1 / s Absolute Maximum Ratings (Ta=25˚C) e ) Parameter Symbol Ratings Unit 16.0±1.0 c type Collector to base voltage VCBO 500 V n d tage. ued Collector to emitter voltage VCEO 400 V le s ontin Emitter to base voltage VEBO 7 V a elifecyc disc Peak collector current ICP 4 A n u t.

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Datasheet Details

Part number 2SC4986
Manufacturer Matsushita Electric Industrial
File Size 184.50 KB
Description NPN Transistor
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Power Transistors 2SC4986 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 7.5±0.2 4.5±0.2 3.8±0.2 s Features 10.8±0.2 q High collector to base voltage VCBO q High collector to emitter VCEO q Allowing automatic insertion with radial taping 2.5±0.1 90° 0.65±0.1 0.85±0.1 1.0±0.1 0.8C 0.8C 0.7±0.1 0.7±0.1 / s Absolute Maximum Ratings (Ta=25˚C) e ) Parameter Symbol Ratings Unit 16.0±1.0 c type Collector to base voltage VCBO 500 V n d tage. ued Collector to emitter voltage VCEO 400 V le s ontin Emitter to base voltage VEBO 7 V a elifecyc disc Peak collector current ICP 4 A n u t ed, Collector current IC 2 A roduc d typ Collector power dissipation PC 1.
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