Datasheet Summary
Power Transistors
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
Unit: mm
7.5±0.2
4.5±0.2
3.8±0.2 s Features
10.8±0.2 q High collector to base voltage VCBO q High collector to emitter VCEO q Allowing automatic insertion with radial taping
2.5±0.1
90° 0.65±0.1 0.85±0.1
1.0±0.1 0.8C
0.8C
0.7±0.1
0.7±0.1
/ s...