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MXP4004BE - 40V N-Channel MOSFET

Download the MXP4004BE datasheet PDF. This datasheet also covers the MXP4004BT variant, as both devices belong to the same 40v n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • z LeadFree z Low RDS(ON) to Minimize Conductive Loss z Low Gate Change for Fast Switching.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MXP4004BT-MaxPowerSemiconductor.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number MXP4004BE
Manufacturer MaxPower Semiconductor
File Size 174.26 KB
Description 40V N-Channel MOSFET
Datasheet download datasheet MXP4004BE Datasheet

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Other Datasheets by MaxPower Semiconductor

Part Number Description
MXP4004BT 40V N-Channel MOSFET
MXP4004BTS 40V N-Channel MOSFET
MXP4004AT 40V N-Channel MOSFET
MXP4004CT N-Channel MOSFET
MXP4004DT 40V N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
40V N-Channel MOSFET MXP4004BT/BE Datasheet Applications: z Power Supply z DC-DC Converters Features: z LeadFree z Low RDS(ON) to Minimize Conductive Loss z Low Gate Change for Fast Switching Application z Optimized BVDSS Capability VDSS 40 V RDS(ON) (Max) 4.0 mΩ IDa 173 A Ordering Information Part Number Package Brand MXP4004BT TO220 MXP MXP4004BE TO263 Absolute Maximum Ratings Tc=25℃ unless otherwise specified Symbol MXP Parameter TO-263 Value Units VDS Drain-to-Source Voltage IDa Continuous Drain Current (TC=25℃) IDM Pulsed Drain Current @VG=10V EAS Single Pulse Avalanche Energy (L=1mH) 40 V 173 A 693 724 mJ IAS Pulsed Avalanche Energy Figure.9 A TJ and TSTG Operating Junction and Storage Temperature Range -55 to 175 ℃ a.