MXP40N1P5AT
Features
- Proprietary New Trench Technology
- RDS(ON),typ.=1.2mΩ@VGS=10V
- Low Gate Charge Minimize Switching Loss
- Fast Recovery Body Diode
Applications
- High efficiency DC/DC Converters
- Synchronous Rectification
- UPS Inverter
MXP40N1P5AT, MXP40N1P5AF
BVDSS 40V
RDS(ON),max. 1.5mΩ
ID[2] 379
TO-263-2L
Ordering Information
Part Number Package MXP40N1P5AT TO-220 MXP40N1P5AF TO-263-2L
Marking MXP40N1P5AT MXP40N1P5AF
Absolute Maximum Ratings
TC=25℃ unless otherwise specified
Symbol VDSS VGSS
IDM EAS PD TL TJ& TSTG
Parameter Drain-to-Source Voltage[1] Gate-to-Source Voltage Continuous Drain Current[2]
Continuous Drain Current[3]
Continuous Drain Current at TC=100℃[2]
Pulsed Drain Current at VGS=10V[2,4] Single Pulse Avalanche Energy (VDD=30V, VGS=10V, RG=25Ω, L=1m H) Power Dissipation Derating Factor above 25℃ Soldering Temperature Distance of 1.6mm from case for 10 seconds
Operating and Storage Temperature Range
Value 40 ±20 379 192 268
1514 834 397 2.6 300
-55 to...
