Datasheet4U Logo Datasheet4U.com

MXP1007AT - 100V N-ch Power MOSFET

Key Features

  • Proprietary New Trench Technology.
  • RDS(ON),typ. =5.3mΩ@VGS=10V.
  • Low Gate Charge Minimize Switching Loss.
  • Fast Recovery Body Diode MXP1007AT BVDSS 100V RDS(ON),max. 7.0mΩ ID[2] 143.

📥 Download Datasheet

Datasheet Details

Part number MXP1007AT
Manufacturer MaxPower
File Size 472.33 KB
Description 100V N-ch Power MOSFET
Datasheet download datasheet MXP1007AT Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
MXP1001-PS Position Sensing Photo Detectors Microsemi
MXP1001-Q Position Sensing Photo Detectors Microsemi
MXP1002PC-IR IR Enhanced Photo Detectors Microsemi
MXP1002PV-IR IR Enhanced Photo Detectors Microsemi
MXP1004-PS Position Sensing Photo Detectors Microsemi

Other Datasheets by MaxPower

Part Number Description
MXP6004CTS 60V N-Channel MOSFET
MXP6006CT 60V N-Channel MOSFET
MXP6006DF 60V N-Channel MOSFET
MXP6006DT 60V N-Channel MOSFET
MXP6008CT N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
100V N-ch Power MOSFET General Features  Proprietary New Trench Technology  RDS(ON),typ.=5.3mΩ@VGS=10V  Low Gate Charge Minimize Switching Loss  Fast Recovery Body Diode MXP1007AT BVDSS 100V RDS(ON),max. 7.