Description
The DS1265 8M Nonvolatile SRAMs are 8,388,608-bit, fully static nonvolatile SRAMs organized as 1,048,576 words by 8 bits.
Features
- 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Unlimited write cycles Low-power CMOS operation Read and write access times as fast as 70 ns Lithium energy source is electrically disconnected to retain freshness until power is applied for the first time Full ±10% VCC operating range (DS1265Y) Optional ±5% VCC operating range (DS1265AB) Optional industrial temperature range of.
DS1265Y Datasheet
