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DS1220AB Datasheet 16k Nonvolatile Sram

Manufacturer: Maxim Integrated (now Analog Devices)

Overview: 19-5580; Rev 10/10 www.maxim-ic.com.

General Description

A0-A10 DQ0-DQ7 - Address Inputs - Data In/Data Out CE - Chip Enable WE - Write Enable OE VCC GND - Output Enable - Power (+5V) - Ground DESCRIPTION The DS1220AB and DS1220AD 16k Nonvolatile SRAMs are 16,384-bit, fully static, nonvolatile SRAMs organized as 2048 words by 8 bits.

Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition.

When such a condition occurs, the lithium energy source is automatically switched on and write protection is unconditionally enabled to prevent data corruption.

Key Features

  • 10 years minimum data retention in the absence of external power.
  • Data is automatically protected during power loss.
  • Directly replaces 2k x 8 volatile static RAM or EEPROM.
  • Unlimited write cycles.
  • Low-power CMOS.
  • JEDEC standard 24-pin DIP package.
  • Read and write access times of 100 ns.
  • Lithium energy source is electrically disconnected to retain freshness until power is applied for the first time.
  • Full ±10% VCC operating range (DS1220AD).
  • Option.

DS1220AB Distributor