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DS1220AB Datasheet PDF

Maxim Integrated DS1220AB

The DS1220AB and DS1220AD 16k Nonvolatile SRAMs are 16,384-bit, fully static, nonvolatile SRAMs organized as 2048 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the lithium energy source is automatically switched on and write protection is unconditionally enabled to prevent data corruption.
Part No. DS1220AB
Datasheet DS1220AB Download
Manufacturer
Maxim Integrated
Description 16k Nonvolatile SRAM
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DS1220AB datasheet page 1 preview

FEATURES

● 10 years minimum data retention in the absence of external power
● Data is automatically protected during power loss
● Directly replaces 2k x 8 volatile static RAM or EEPROM
● Unlimited write cycles
● Low-power CMOS
● JEDEC standard 24-pin DIP package
● Read and write access times of 100 ns
● Lithium energy source is electrically disconnected to retain freshness until power is applied for the first time
● Full ±10% VCC operating range (DS1220AD)
● Optional ±5% VCC operating range (DS1220AB)
● Optional industrial temperature range of -40°C to +85°C, designated IND DS1220AB/AD 16k Nonvolatile SRAM PIN ASSIGNMENT A7 A6 A5 A4 A3 A2 A1 A0 DQ0 DQ1 DQ2 GND 1 2 3 4 5 6 7 8 9 10 11 12 24 VCC 23 A8 22 A9 21 WE 20 OE 19 A10 18 CE 17 DQ7 16 DQ6 15 DQ5 14 DQ4 13 DQ3 24-Pin ENCAPSULATED PACKAGE 720-mil EXTENDED PIN

DESCRIPTION

A0-A10 DQ0-DQ7 - Address Inputs - Data In/Data Out CE - Chip Enable WE - Write Enable OE VCC GND - Output Enable - Power (+5V) - Ground

DESCRIPTION

The NV SRAMs can be used in place of existing 2k x 8 SRAMs directly conforming to the popular bytewide 24-pin DIP standard.
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