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DS1225AB Datasheet 64k Nonvolatile Sram

Manufacturer: Maxim Integrated (now Analog Devices)

Overview: 19-5625; Rev 11/10 www.maxim-ic.com.

General Description

A0-A12 - Address Inputs DQ0-DQ7 - Data In/Data Out CE - Chip Enable WE - Write Enable OE VCC GND NC - Output Enable - Power (+5V) - Ground - No Connect DESCRIPTION The DS1225AB and DS1225AD are 65,536-bit, fully static, nonvolatile SRAMs organized as 8192 words by 8 bits.

Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition.

When such a condition occurs, the lithium energy source is automatically switched on and write protection is unconditionally enabled to prevent data corruption.

Key Features

  • 10 years minimum data retention in the absence of external power.
  • Data is automatically protected during power loss.
  • Directly replaces 8k x 8 volatile static RAM or EEPROM.
  • Unlimited write cycles.
  • Low-power CMOS.
  • JEDEC standard 28-pin DIP package.
  • Read and write access times of 70 ns.
  • Lithium energy source is electrically disconnected to retain freshness until power is applied for the first time.
  • Full ±10% VCC operating range (DS1225AD).
  • Optiona.

DS1225AB Distributor