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DS1245AB Datasheet 1024k Nonvolatile Sram

Manufacturer: Maxim Integrated (now Analog Devices)

Overview: 19-5638; Rev 11/10 www.maxim-ic.com.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

A0 - A16 - Address Inputs DQ0 - DQ7 - Data In/Data Out CE - Chip Enable WE - Write Enable OE - Output Enable VCC GND - Power (+5V) - Ground NC - No Connect 1 of 10 DS1245Y/AB DESCRIPTION The DS1245 1024k Nonvolatile SRAMs are1,048,576-bit, fully static, nonvolatile SRAMs organized as 131,072 words by 8 bits.

Each complete NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition.

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Key Features

  • 10 years minimum data retention in the absence of external power.
  • Data is automatically protected during power loss.
  • Replaces 128k x 8 volatile static RAM, EEPROM or Flash memory.
  • Unlimited write cycles.
  • Low-power CMOS.
  • Read and write access times of 70 ns.
  • Lithium energy source is electrically disconnected to retain freshness until power is applied for the first time.
  • Full ±10% VCC operating range (DS1245Y).
  • Optional ±5% VCC operating range (DS1245A.

DS1245AB Distributor