Datasheet Details
| Part number | DS1245AB |
|---|---|
| Manufacturer | Maxim Integrated (now Analog Devices) |
| File Size | 223.35 KB |
| Description | 1024k Nonvolatile SRAM |
| Datasheet |
 DS1245AB Datasheet
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General Description
A0 - A16
- Address Inputs
DQ0 - DQ7
- Data In/Data Out
CE - Chip Enable
WE - Write Enable
OE - Output Enable
VCC GND
- Power (+5V) - Ground
NC - No Connect
1 of 10
DS1245Y/AB
DESCRIPTION
The DS1245 1024k Nonvolatile SRAMs are1,048,576-bit, fully static, nonvolatile SRAMs organized as 131
Key Features
- 10 years minimum data retention in the absence of external power.
- Data is automatically protected during power loss.
- Replaces 128k x 8 volatile static RAM, EEPROM or Flash memory.
- Unlimited write cycles.
- Low-power CMOS.
- Read and write access times of 70 ns.
- Lithium energy source is electrically disconnected to retain freshness until power is applied for the first time.
- Full ±10% VCC operating range (DS1245Y).
- Optional ±5% VCC operating range (DS1245A.