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DS21Q58 Datasheet PDF

Maxim Integrated DS21Q58

The Arrhenius model will be used to determine the acceleration factor for failure mechanisms that are temperature accelerated.
Part No. DS21Q58
Datasheet DS21Q58 Download
Manufacturer
Maxim Integrated
Description Dallas Semiconductor
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DS21Q58 datasheet page 1 preview

DESCRIPTION

: A description of this device can be found in the product data sheet. You can find the product data sheet at Reliability Derating: AfT = exp((Ea/k)*(1/Tu - 1/Ts)) = tu/ts AfT = Acceleration factor due to Temperature tu = Time at use temperature (e.g. 55°C) ts = Time at stress temperature (e.g. 125°C) k = Boltzmann’s Constant (8.617 x 10-5 eV/°K) Tu = Temperature at Use (°K) Ts = Temperature at Stress (°K) Ea = Activation Energy (e.g. 0.7 ev) The activation energy of the failure mechanism is derived from either internal studies or industry accepted standards, or activation energy of 0.7ev will be used whenever actual failure mechanisms or their activation energies are unknown. All deratings will be done from the stress ambient temperature to the use ambient temperature. An exponential model will be used to determine the acceleration factor for failure mechanisms, which are voltage accelerated. AfV = exp(B*(Vs - Vu)) AfV = Acceleration factor due to Voltage Vs = Stress Voltage (e.g.
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