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DS28E80 Datasheet Gamma Radiation Resistant 1-wire Memory

Manufacturer: Maxim Integrated (now Analog Devices)

Overview: DS28E80 EVALUATION KIT AVAILABLE Gamma Radiation Resistant 1-Wire Memory.

General Description

The DS28E80 is a user-programmable nonvolatile memory chip.

In contrast to the floating-gate storage cells, the DS28E80 employs a storage cell technology that is resistant to gamma radiation.

The DS28E80 has 248 bytes of user memory that are organized in blocks of 8 bytes.

Key Features

  • High Gamma Resistance Allows User-Programmable Manufacturing or Calibration Data Before Medical Sterilization.
  • Resistant Up to 75kGy (kiloGray) of Gamma Radiation.
  • Reprogrammable 248 Bytes of User Memory.
  • Lower Block Size Provides Greater Flexibility in Programming User Memory.
  • Memory is Organized as 8-Byte Blocks.
  • Each Block Can Be Written 8 Times.
  • User-Programmable Write Protection for Individual Memory Blocks.
  • Ad.

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