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DS28E80 - Gamma Radiation Resistant 1-Wire Memory

General Description

The DS28E80 is a user-programmable nonvolatile memory chip.

In contrast to the floating-gate storage cells, the DS28E80 employs a storage cell technology that is resistant to gamma radiation.

The DS28E80 has 248 bytes of user memory that are organized in blocks of 8 bytes.

Key Features

  • High Gamma Resistance Allows User-Programmable Manufacturing or Calibration Data Before Medical Sterilization.
  • Resistant Up to 75kGy (kiloGray) of Gamma Radiation.
  • Reprogrammable 248 Bytes of User Memory.
  • Lower Block Size Provides Greater Flexibility in Programming User Memory.
  • Memory is Organized as 8-Byte Blocks.
  • Each Block Can Be Written 8 Times.
  • User-Programmable Write Protection for Individual Memory Blocks.
  • Ad.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DS28E80 EVALUATION KIT AVAILABLE Gamma Radiation Resistant 1-Wire Memory General Description The DS28E80 is a user-programmable nonvolatile memory chip. In contrast to the floating-gate storage cells, the DS28E80 employs a storage cell technology that is resistant to gamma radiation. The DS28E80 has 248 bytes of user memory that are organized in blocks of 8 bytes. Individual blocks can be write-protected. Each memory block can be written 8 times. The DS28E80 communicates over the single-contact 1-Wire® bus at standard speed or overdrive speed. Each device has its own guaranteed unique 64-bit registration number that is factory programmed into the chip.