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MAX2602 Datasheet PDF

Maxim Integrated MAX2602

The MAX2602 includes a highperformance silicon bipolar RF power transistor, and a biasing diode that matches the thermal and process characteristics of the power transistor. This diode is used to create a bias network that accurately controls the power transistor’s collector current as the temperature changes. The MAX2601/MAX2602 can be used as the final stage in a discrete or module power amplifier.
Part No. MAX2602
Datasheet MAX2602 Download
Manufacturer
Maxim Integrated
Description 1W RF Power Transistors
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MAX2602 datasheet page 1 preview

APPLICATIONS

____________________________Features ♦ Low Voltage: Operates from 1 Li-Ion or 3 NiCd/NiMH Batteries ♦ DC-to-Microwave Operating Range ♦ 1W Output Power at 900MHz ♦ On-Chip Diode for Accurate Biasing (MAX2602) ♦ Low-Cost Silicon Bipolar Technology ♦ Does Not Require Negative Bias or Supply Switch ♦ High Efficiency: 58%

GENERAL DESCRIPTION

The MAX2601/MAX2602 are RF power transistors optimized for use in portable cellular and wireless equipment that operates from three NiCd/NiMH cells or one Li-Ion cell. These transistors deliver 1W of RF power from a 3.6V supply with efficiency of 58% when biased for constant-envelope applications (e.g., FM or FSK). For NADC (IS-54) operation, they deliver 29dBm with -28dBc ACPR from a 4.8V supply. The MAX2601 is a high-performance silicon bipolar RF power transistor. Silicon bipolar technology eliminates the need for voltage inverters and sequencing circuitry, as required by GaAsFET power amplifiers. Furthermore, a drain switch is not required to turn off the MAX2601/MAX2602.
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