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MAX2601 - 1W RF Power Transistors

General Description

The MAX2601/MAX2602 are RF power transistors optimized for use in portable cellular and wireless equipment that operates from three NiCd/NiMH cells or one Li-Ion cell.

Key Features

  • Low Voltage: Operates from 1 Li-Ion or 3 NiCd/NiMH Batteries.
  • DC-to-Microwave Operating Range.
  • 1W Output Power at 900MHz.
  • On-Chip Diode for Accurate Biasing (MAX2602).
  • Low-Cost Silicon Bipolar Technology.
  • Does Not Require Negative Bias or Supply Switch.
  • High Efficiency: 58% PART MAX2601ESA MAX2602ESA Ordering Information TEMP RANGE -40°C to +85°C -40°C to +85°C PIN-.

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Other Datasheets by Maxim Integrated (now Analog Devices)

Part Number Description
MAX2602 1W RF Power Transistors
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MAX2601/MAX2602 19-1185; Rev 3; 9/08 EVAALVUAAILTAIOBNLEKIT 3.6V, 1W RF Power Transistors for 900MHz Applications General Description The MAX2601/MAX2602 are RF power transistors optimized for use in portable cellular and wireless equipment that operates from three NiCd/NiMH cells or one Li-Ion cell. These transistors deliver 1W of RF power from a 3.6V supply with efficiency of 58% when biased for constant-envelope applications (e.g., FM or FSK). For NADC (IS-54) operation, they deliver 29dBm with -28dBc ACPR from a 4.8V supply. The MAX2601 is a high-performance silicon bipolar RF power transistor. The MAX2602 includes a highperformance silicon bipolar RF power transistor, and a biasing diode that matches the thermal and process characteristics of the power transistor.