Datasheet4U Logo Datasheet4U.com

79C2040 - 20 Megabit (512K x 40-Bit) EEPROM MCM

Datasheet Summary

Description

Maxwell Technologies’ 79C2040 multi-chip module (MCM) memory

Features

  • 512k x 40-bit EEPROM MCM.
  • RAD-PAK® radiation-hardened against natural.
  • space radiation.
  • Total dose hardness: - >100 krad (Si) - Dependent upon orbit.
  • Excellent Single event effects - SELTH > 120 MeV/mg/cm2 - SEU > 90 MeV/mg/cm2 read mode - SEU = 18 MeV/mg/cm2 write mode.
  • High endurance - 10,000 cycles/byte (Page Programming Mode) - 10 year data retention.
  • Page Write Mode: 128 Dword Page.
  • High Speed: - 150 and 200 ns maximum access t.

📥 Download Datasheet

Datasheet preview – 79C2040

Datasheet Details

Part number 79C2040
Manufacturer Maxwell Technologies
File Size 469.09 KB
Description 20 Megabit (512K x 40-Bit) EEPROM MCM
Datasheet download datasheet 79C2040 Datasheet
Additional preview pages of the 79C2040 datasheet.

📁 Similar Datasheet

  • 79CN10N - Power Transistor (Infineon)
Other Datasheets by Maxwell Technologies
  • 79C0408 - 4 Megabit (512k x 8-bit) EEPROM MCM
  • 79C0832 - 8 Megabit (256K x 32-Bit) EEPROM MCM

Full PDF Text Transcription

Click to expand full text
79C2040 20 Megabit (512K x 40-Bit) EEPROM MCM Logic Diagram Memory FEATURES: 512k x 40-bit EEPROM MCM • RAD-PAK® radiation-hardened against natural • space radiation • Total dose hardness: - >100 krad (Si) - Dependent upon orbit • Excellent Single event effects - SELTH > 120 MeV/mg/cm2 - SEU > 90 MeV/mg/cm2 read mode - SEU = 18 MeV/mg/cm2 write mode • High endurance - 10,000 cycles/byte (Page Programming Mode) - 10 year data retention • Page Write Mode: 128 Dword Page • High Speed: - 150 and 200 ns maximum access times • Automatic programming - 10 ms automatic Page/Dword write • Low power dissipation - 375 mW/MHz active current -3.
Published: |