29F32G08 Datasheet | Maxwell

NAND Flash Module Preliminary Features : NAND Flash Interface Single Level Cell (SLC) Technology ONFI 2.2 pliant Operating Voltage VCC 3.0 - 3.6V VCCQ 1.7 - 1.95V or 3.0-3.6V High density 32Gbit per FLASH NAND die Supports higher speed designs with less capacitance/fewer I/O's to drive Page Size 8640 bytes (8192 + 448 spare bytes) Supports external BCH correction algorithms (16 bit correction per 540 bytes) Features High reliability data storage for demanding space applications Ceramic hermetic package with built-in TID shielding Class E, I, B or S Speed Can be used in asynch or synch mode Asynch: Up to asynch timing mode 5 (50MT/sec) Synch: Up to synchronous timing mode 5 (200MT/sec) Temperature Range -55⁰C to 125⁰C Endurance 60,000 cycles June 2015 Maxwell Technologies Preliminary NAND Flash Supported Features ONFI 1.0, 2.0, 2.1, 2.2 Interleaved (multi-plane) operations Multiple LUN operations Small Data Move Interleaved Address restrictions for cache operations No interleaved block address restrictions Overlapped/concurrent interleaving supported Supports timing modes: 0 thru 5 Supports driver strength settings: underdrive, overdrive 1 and 2 Supported mands: Reset Synchronous Reset Reset LUN Get Features Set Features Read Status Read Status Enchanced Change Row Address Read Mode Read Page Interleaved Read Page Cache Sequential Read Page Cache Random Read Page Cache Last Program Page Program Page Interleaved Program Page Cache Erase Block Erase Block Interleaved Copyback Read Copyback Program Copyback Program Interleaved Read Unique ID Read Parameter Page Read ID Not Supported Odd to Even Page Copyback Non-sequential page programming 16 bit data bus width per Target/LUN Extended ECC Synchronous Mode: clock stopped for data input June 2015 Maxwell Technologies 32Gb X 08 Preliminary NAND Flash Array...