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79LV0408 - Low Voltage 4 Megabit EEPROM

Datasheet Summary

Description

Maxwell Technologies’ 79LV0

Features

  • S.
  • Four 128k x 8-bit EEPROMs MCM.
  • RAD-PAK® radiation-hardened against natural space radiation.
  • Total dose hardness: - > 100 krad (Si), depending upon space mission.
  • Excellent Single event effects @ 25°C - SEL > 120 MeV cm2/mg (Device) - SEU > 85 MeV cm2/mg(Memory Cells) - SEU > 18 MeV cm2/mg (Write Mode) - SET > 40 MeV cm2/mg (Read Mode).
  • Package - 40 Pin RAD-PAK® Flat Pack - 40 Pin RAD-PAK® Rad Tolerant Flat Pack.
  • High sp.

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Datasheet preview – 79LV0408

Datasheet Details

Part number 79LV0408
Manufacturer Maxwell
File Size 423.84 KB
Description Low Voltage 4 Megabit EEPROM
Datasheet download datasheet 79LV0408 Datasheet
Additional preview pages of the 79LV0408 datasheet.

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    Full PDF Text Transcription

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    79LV0408 Low Voltage 4 Megabit (512k x 8-bit) EEPROM CE1 RES R/B WE OE A0-16 128Kx 8 CE2 128Kx 8 CE3 128Kx 8 CE4 128Kx 8 Memory Logic Diagram I/O0-7 • FEATURES • • • Four 128k x 8-bit EEPROMs MCM • RAD-PAK® radiation-hardened against natural space radiation • Total dose hardness: - > 100 krad (Si), depending upon space mission • Excellent Single event effects @ 25°C - SEL > 120 MeV cm2/mg (Device) - SEU > 85 MeV cm2/mg(Memory Cells) - SEU > 18 MeV cm2/mg (Write Mode) - SET > 40 MeV cm2/mg (Read Mode) • Package - 40 Pin RAD-PAK® Flat Pack - 40 Pin RAD-PAK® Rad Tolerant Flat Pack • High speed: -200 and 250 ns access times available • Data Polling and Ready/Busy signal • Software data protection • Write protection by RES pin • High endurance - 10,000 erase/write (Page Mode), - 10 year
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