GENERAL DESCRIPTION
FEATURES
V DS (V) = -30V I D (A) = -4A (V GS = -10V) R DS(on) = 0.060 ohm @ V GS = -10V R DS(on) = 0.090 ohm@ V GS = -4.5V Low gate charge Fast switching speed APPLICATIONS
Load switch DC - DC converters Power management D S G SOT-23 G D S ABSOLUTE MAXIMUM RATINGS
(T A = 25℃ Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current a Pulsed Drain Current b a Symbol V DS V GS T A =25℃ T A =70℃ ID I DM IS T A =25℃ T A =70℃ PD T J ,T stg Maximum Units V - 30 ±20 -4 -3.2 A - 20 -2.2 1.4 1.0 -55 to 150 W ℃ A Continuous Source Current (Diode Conduction) Power Dissipation a Operating Junction and Storage Temperature Range Thermal Resistance Ratings Parameter Maximum Junction-to-Ambient a t<= 5 sec Steady-State Symbol R θ JA 130 Maximum 90 Units ℃/ W Megapower Semiconductor Mar,2009 1 MI3407 Rev.2.1 Datasheet pdf - MI3407 Package Outlines and Ordering Information Device Marking MPTS Device MI3407 Reel Size 7’’ Tape Width 8mm Quantit...
