MF5853 Datasheet | MegaPower

.. P-Channel 20V (D-S ) MOSFET With Schottky Diode General Description These miniature surface mount MOSFET uses advance Trench process , low R DS ( ON ) assures minimal power loss and converts energy . Making this device idea for use in power management circuit. Features MOSFET V DS (V) = -20V I D (A) = -3.0A (V GS = -4.5V) R DS(on) = 0.110 ohm @ V GS = -4.5V R DS(on) = 0.120 ohm@ V GS = -2.5V Applications Li - Ion Battery Charging High Side DC - DC Conversion Circuits High Side Drive for Small Brushless DC Motors Power Management in Portable , Battery Powered Products A PIN1 D1 D2 A S G Schottky Diode V KA (V) = 20V I F (A) = 1.0A V F = 0.42 V @ 0 .5 A 1 A MDFN 2×3×0 . 75 ( mm ) Slim FET Schottky P-channel Diode...