MEM2309 Description
MEM2309 P-Channel MOSFET MEM2309S Descriptionÿ MEM2309SGSeries P-channel enhancement mode field-effect transistor ,produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance. This device particularly suits low voltage applications, and low power dissipation. Featureÿ l -30V/-6A RDS(ON) =53m Ω@ VGS=-10V,ID=-6A RDS(ON) =68mΩ@ VGS=-4.5V,ID=-4A High Density Cell...
MEM2309 Key Features
- l Pin Configurationÿ Typical Application
- Power management Load switch Battery protection m ρW 3V Ϋm w`R •yΡ b€