Datasheet Summary
P-Channel MOSFET MEM2309S Descriptionÿ
MEM2309SGSeries P-channel enhancement mode field-effect transistor ,produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance. This device particularly suits low voltage applications, and low power dissipation.
Featureÿ l -30V/-6A RDS(ON) =53m Ω@ VGS=-10V,ID=-6A RDS(ON) =68mΩ@ VGS=-4.5V,ID=-4A High Density Cell Design For Ultra Low On-Resistance Surface mount package:SOP8 l l
Pin Configurationÿ
Typical Application: l l l Power management Load switch Battery protection m
ρW
3V
Ϋm w`R
- yΡ...