MDS500L Datasheet | Micrel Semiconductor

DESCRIPTION The MDS500L is a high power MON BASE bipolar transistor. It is designed for MODE-S ELM systems in the 1030 MHz frequency band. The transistor includes input prematch for broadband performance. The device has gold thin-film metallization and diffused ballasting in a hermetically sealed package for proven highest MTTF. CASE OUTLINE 55ST Style 1 ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation Device Dissipation @25 C1 833 W Maximum Voltage and Current Collector to Emitter Voltage (BVces) 70 V Emitter to Base Voltage (BVebo) 3.5 V Peak Collector Current (Ic) 25 A Maximum Temperatures Storage Temperature -65 to +150 C Operating Junction Temperature +200 C ELECTRICAL CHARACTERISTICS @ 25 C SYMBOL Pout Pin Pg c CHARACTERISTICS Power Out Power Input Power Gain Collector Efficiency Load Mismatch Tolerance Pulse Droop Rise Time TEST CONDITIONS F = 1030 MHz Vcc = 50 Volts PW = Note 2 DF = Note 2 F = 1030 MHz F = 1030 MHz MIN 500 MAX 70 UNITS W W d B % 8.5 50 3:1 0.8 100 VSWR Pd1 Trise1 d B n Sec FUNCTIONAL CHARACTERISTICS @ 25 C BVebo BVces BVcbo Ices h FE jc1 Emitter to Base Breakdown Collector to Emitter Breakdown Collector to Base Breakdown Collector to Emitter Leakage DC - Current Gain Thermal Resistance Ie = 30 m A Ic = 50 m A Ic = 50 m A Vce = 50V Vce = 5V, Ic = 1.0 A 3.0 70 70 15 20 0.21 C/W V V V m A NOTE 1: AT RATED OUTPUT POWER AND PULSE CONDITIONS NOTE 2: Burst: 32µSec ON/ 18µSec OFF x 48, repeated at 23m Sec Rev. A May 2006 Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at .microsemi. or contact our factory direct. .. Pout and Nc vs Pin (32us; 2%) 700 600 500 400 300 200 100 0 0 20 40 Pin(W) Pout Efficiency 70 60 50 40 30 20 10 0 100 Pout and Nc vs Pin (32us burst,N=48) 700 600 500 70 60 50 40 30 20 10 0 10 20 30 40 50 60 70 80 Efficiency (%) Efficiency (%) Pout(W) Pout (W) 400 300 200 100 0 Pin(W ) Microsemi reserves the right to...